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GST Cell Array Characterisation Using Picosecond Ultrasonics

17 February 2012

Phase change random access memory alloys (PRAM or PCM) are a class of non-volatile memory that is thought as viable alternatives to flash memory technologies depending on the end applications and its key performance requirements.

Ge2Sb2Te5 alloy (GST) is the most widely used chalcogenide material for PCM application and has many unique properties, including strong temperature-dependent film, low thermal conductivity and high electrical resistivity.

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  • GST Cell Array Characterisation Using Picosecond Ultrasonics
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