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Ulm Photonics has opened a new manufacturing facility in Ulm, Germany. The Ulm site has a 120m² epitaxial growth cleanroom, a 200m² device production cleanroom and 150m² of office space.
Ulm Photonics has opened a new manufacturing facility in Ulm, Germany. The Ulm site has a 120m² epitaxial growth cleanroom, a 200m² device production cleanroom and 150m² of office space.
 VCSEL product range.
VCSEL product range.
 Devices sell into data communications and sensor/printer markets.
Devices sell into data communications and sensor/printer markets.
Mean time to failure of different VCSEL ensembles of first and second generation devices.
Mean time to failure of different VCSEL ensembles of first and second generation devices.
 VCSEL output power measured at room temperature as a function of actual stress hours.
VCSEL output power measured at room temperature as a function of actual stress hours.
 Ulm manufactures high speed VCSELs for communication, printing and sensor markets.
Ulm manufactures high speed VCSELs for communication, printing and sensor markets.
New 4in MBE equipment grows single crystal VCSELs.
New 4in MBE equipment grows single crystal VCSELs.
 VCSELs cost less to make than edge emitting diodes and are faster and more efficient.
VCSELs cost less to make than edge emitting diodes and are faster and more efficient.
 Substrate for III-V Nitride Epitaxy.
Substrate for III-V Nitride Epitaxy.
Gallium Nitride epi wafers on sapphire substrates.
Gallium Nitride epi wafers on sapphire substrates.
 Making GaN bulk crystals, step 2: Slicing the grown GaN boule into wafers using a diamond wire saw.
Making GaN bulk crystals, step 2: Slicing the grown GaN boule into wafers using a diamond wire saw.
 Making GaN bulk crystals, step 3: Polishing the wafers.
Making GaN bulk crystals, step 3: Polishing the wafers.
Making GaN bulk crystals, step 4: LEDs are fabricated on bulk GaN substrate. One electrode goes on top of the LED and the other on the conducting GaN substrate.
Making GaN bulk crystals, step 4: LEDs are fabricated on bulk GaN substrate. One electrode goes on top of the LED and the other on the conducting GaN substrate.
 Osram is aiming to double its opto-semiconductor production capacity by 2005.
Osram is aiming to double its opto-semiconductor production capacity by 2005.
 Operator at the Regensburg optoelectronics factory.
Operator at the Regensburg optoelectronics factory.
Osram Opto Semiconductors supplies compact 1W 'Golden Dragon' LEDs.
Osram Opto Semiconductors supplies compact 1W 'Golden Dragon' LEDs.
 Blue lasers promise, amongst other things, higher packing densities on optical discs (courtesy Fraunhofer Institute for Applied Solid State Physics).
Blue lasers promise, amongst other things, higher packing densities on optical discs (courtesy Fraunhofer Institute for Applied Solid State Physics).
 Investment in the new factory is around €120 million ($129 million).
Investment in the new factory is around €120 million ($129 million).
TriQuint Optoelectronics is headquartered in Breinigsville, Pennsylvania (USA) and began it's expansion in Matamoros, Mexico in January 2003.
TriQuint Optoelectronics is headquartered in Breinigsville, Pennsylvania (USA) and began it's expansion in Matamoros, Mexico in January 2003.
TriQuint makes a wide variety of components and modules for wireless phones, base stations, optical networks, broadband and microwave communications using advanced process technology including gallium arsenide, indium phosphide, silicon germanium and surface acoustic wave (SAW).
TriQuint makes a wide variety of components and modules for wireless phones, base stations, optical networks, broadband and microwave communications using advanced process technology including gallium arsenide, indium phosphide, silicon germanium and surface acoustic wave (SAW).
 TriQuint's Matamoros facility will produce transponders, transceivers, transmitters and receivers including optical engines for these XFP 10Gb/s optoelectronic modules.
TriQuint's Matamoros facility will produce transponders, transceivers, transmitters and receivers including optical engines for these XFP 10Gb/s optoelectronic modules.
TriQuint Semiconductor, Inc. is headquartered at Hillsboro, Oregon (USA), and supplies communications products, particularly for RF/IF and optical applications.
TriQuint Semiconductor, Inc. is headquartered at Hillsboro, Oregon (USA), and supplies communications products, particularly for RF/IF and optical applications.
 Wafer Processing Engineer, Raita Hoech, leads a tour of the new facility.
Wafer Processing Engineer, Raita Hoech, leads a tour of the new facility.
Sumitomo's optical communications product line.
Sumitomo's optical communications product line.
Sumitomo's managing director cuts the ribbon to officially open the new plant.
Sumitomo's managing director cuts the ribbon to officially open the new plant.
Sumitomo's Optical Roadmap.
Sumitomo's Optical Roadmap.
Different methods of growing GaAs crystals.
Different methods of growing GaAs crystals.
Different compound semiconductor materials manufactured by Sumitomo.
Different compound semiconductor materials manufactured by Sumitomo.
RF Micro Devices supplies radio frequency integrated circuits (RFICs) and solutions to the wireless communications industry.
RF Micro Devices supplies radio frequency integrated circuits (RFICs) and solutions to the wireless communications industry.
 The conversion to 6in wafers will more than double RFMD's number of die per wafer without a significant increase in processing cost per wafer.
The conversion to 6in wafers will more than double RFMD's number of die per wafer without a significant increase in processing cost per wafer.
The fabs perform dry and wet etch, photolithography, ion implantation, metal deposition, dielectric deposition and wafer thinning.
The fabs perform dry and wet etch, photolithography, ion implantation, metal deposition, dielectric deposition and wafer thinning.
 RFMD is converting from 4in to 6in wafer manufacturing at its second GaAs HBT fabrication facility in Greensboro, NC.
RFMD is converting from 4in to 6in wafer manufacturing at its second GaAs HBT fabrication facility in Greensboro, NC.
 RFMD's PowerStar™ GSM power amplifier modules have integrated power control and are manufactured in the company's GaAs HBT fabs.
RFMD's PowerStar™ GSM power amplifier modules have integrated power control and are manufactured in the company's GaAs HBT fabs.
IQE has invested more than £100 million at its UK and US facilities over the last five years.
IQE has invested more than £100 million at its UK and US facilities over the last five years.
 IQE uses both MBE and MOCVD to produce epitaxial materials.
IQE uses both MBE and MOCVD to produce epitaxial materials.
 The company produces substrates for electronic and optoelectronic devices.
The company produces substrates for electronic and optoelectronic devices.
III-V materials are essential for equipment like mobile telephones.
III-V materials are essential for equipment like mobile telephones.
 Wafers from IQE are increasingly going into consumer applications like lasers and receivers for CD units.
Wafers from IQE are increasingly going into consumer applications like lasers and receivers for CD units.
 Satellite communication systems are another III-V growth area.
Satellite communication systems are another III-V growth area.
Fibre-optic communication needs fast devices with good light conversion efficiencies.
Fibre-optic communication needs fast devices with good light conversion efficiencies.
 IQE is producing compound semiconductor epiwafers in both the US and US.
IQE is producing compound semiconductor epiwafers in both the US and US.
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