RF Micro Devices 6in Gallium Arsenide Wafer Fab, Greensboro, NC, USA

Organization

RF Micro Devices, Inc.

Location

Greensboro, NC (USA)

Type of facility (technologies)

GaAs

Area

5,000m² of convertible clean room space, of which approximately 3,000m² has been converted

Project completion

All wafer fabrication in the second GaAs HBT fab was converted to 6in manufacturing during the December 2003 quarter

No of employees

About 2,000 company-wide, 240 working in both fabs

Contractors

Lockwood Green (Architectural Engineers) and Hodess Building Company (General Contractor)

Wafer size

Converting from 4in to 6in

Throughput

210,000 wafers per year

Applications

Wireless communications applications (cellular and PCS phones, base stations, WLANs, Bluetooth wireless technology, GPS and satellite radio, etc.)