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Fairchild Semiconductor’s Generation II XS™ DrMOS Devices Offer 94% Efficiency in 6mm x 6mm Form Factor


Wednesday, May 25, 2011 by Fairchild Semiconductor

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High efficiency, high current handling capability and small form factors are critical to power supply designers when selecting components for voltage regulator solutions. To meet this need, Fairchild Semiconductor (NYSE: FCS), a leading global supplier of high-performance power and mobile products, developed its family of Generation II XS™ DrMOS [Integrated Driver + MOSFET] devices offering high efficiency and power density to enable designers to meet specific design needs for various applications.

Generation II XS DrMOS devices, available in a small, 6mm x 6mm high performance clip PQFN package, feature higher system efficiency with over 91.5% heavy load efficiency at 12Vin, 1Vout, and 25A, and 94% peak efficiency. Generation II XS DrMOS can be operated at a 2MHz switching frequency and have up to 50A of current handling capability.

Leveraging the company's expertise in MOSFETs, gate driver ICs, and packaging technology, Fairchild optimised Generation II XS DrMOS devices for greater efficiency and developed new features. These enhancements make the Generation II XS DrMOS family ideal for applications such as blade servers, high performance gaming motherboards, high-performance notebooks, graphic cards, and high current DC-DC point-of-load (POL) converters.

Devices in the portfolio offer a 5V and 3.3V Tristate level to match the Intel® 4.0 DrMOS specification and are compatible with a variety of PWM controllers on the market. The Generation II XS DrMOS portfolio significantly reduces ringing due to PowerTrench® MOSFET Shielded Gate technology in both the control FET and synchronous FET. The synchronous FET also integrates a Schottky diode which eliminates external snubber circuits, improving overall performance and power density while reducing space and cost. Generation II XS DrMOS devices also include a thermal warning feature for customers to prevent over temperature conditions during fault situations.

The Generation II XS DrMOS portfolio is able to meet different customer and application needs.

Fairchild Semiconductor's Generation II XS DrMOS series provides industry-leading technology to meet the energy efficiency and form factor challenges encountered in today’s designs. Generation II XS DrMOS devices are part of Fairchild’s energy efficient power analog, power discrete and optoelectronics solutions that maximise energy savings in power sensitive applications.

Fairchild Semiconductor: The Right Technology for Your Success™.